A. Pirovano, A. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, R. Bez
{"title":"相变存储单元中的电子开关效应","authors":"A. Pirovano, A. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, R. Bez","doi":"10.1109/IEDM.2002.1175987","DOIUrl":null,"url":null,"abstract":"A detailed investigation of the characteristic current-voltage (I-V) curve and electronic switching effect in chalcogenide-based phase-change memory devices is presented. An original bandgap model of both crystalline and amorphous chalcogenide and a physical picture of the fundamental effects involved in device operation is proposed. The model provides a quantitative description of the device behavior in both DC and transient regime. Finally, simulation results in good agreement with measurements and data reported in literature are presented.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"5 1","pages":"923-926"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"27","resultStr":"{\"title\":\"Electronic switching effect in phase-change memory cells\",\"authors\":\"A. Pirovano, A. Lacaita, D. Merlani, A. Benvenuti, F. Pellizzer, R. Bez\",\"doi\":\"10.1109/IEDM.2002.1175987\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A detailed investigation of the characteristic current-voltage (I-V) curve and electronic switching effect in chalcogenide-based phase-change memory devices is presented. An original bandgap model of both crystalline and amorphous chalcogenide and a physical picture of the fundamental effects involved in device operation is proposed. The model provides a quantitative description of the device behavior in both DC and transient regime. Finally, simulation results in good agreement with measurements and data reported in literature are presented.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"5 1\",\"pages\":\"923-926\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"27\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175987\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175987","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electronic switching effect in phase-change memory cells
A detailed investigation of the characteristic current-voltage (I-V) curve and electronic switching effect in chalcogenide-based phase-change memory devices is presented. An original bandgap model of both crystalline and amorphous chalcogenide and a physical picture of the fundamental effects involved in device operation is proposed. The model provides a quantitative description of the device behavior in both DC and transient regime. Finally, simulation results in good agreement with measurements and data reported in literature are presented.
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