亚100nm非应变和应变Si mosfet的低场迁移率特性

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175775

K. Rim, S. Narasimha, M. Longstreet, A. Mocuta, J. Cai

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引用次数: 81

摘要

一种新的迁移率提取技术表明，应变Si mosfet的迁移率增强在深度低于100 nm的沟道长度中保持不变。通过dR/dL萃取方法证明了通道长度低至40 nm的器件的迁移率测量。结果证实并量化了在比例应变Si mosfet中存在高晕掺杂时迁移率的增强。

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Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs

A novel mobility extraction technique showed that the mobility enhancements in strained Si MOSFETs were retained in deep sub-100 nm channel lengths. Mobility measurement in devices with channel lengths down to 40 nm was demonstrated by a dR/dL extraction method. The results confirmed and quantified the mobility enhancements despite the presence of high halo doping in scaled strained Si MOSFETs.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

发文量