高可靠性倒装片焊点互连热致失效的研究

Aimee M. Morey, S. Popelar, Julie Hook
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引用次数: 1

摘要

本文的实验研究探讨了共晶Sn/Pb和无铅Sn/Ag/Cu焊点的热迁移,并重点研究了温度对失效时间的影响的Arrhenius失效模型。倒装芯片测试车辆使用菊花链模具组装,有或没有底填料,连接到陶瓷和有机封装基板上,使用标准回流工艺。研究了三种不同的碰撞冶金技术:溅射薄膜Al/NiV/Cu、厚电镀镍和厚电镀铜(即铜柱)。测试车辆在125°C到200°C的温度范围内进行无偏高温储存(HTS)测试。故障是通过定期的连续性测试来确定的,直到检测到开路或高电阻率。结果表明,Al/NiV/Cu UBM在低于130℃的温度下具有鲁棒性,厚电镀UBM在150℃的温度下具有鲁棒性。基于高温超导试验结果和相应的分析,建立了锡/铅和无铅锡/银/铜共晶钎料合金的热迁移失效模型,并对失效数据进行了类arrhenius拟合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An Investigation into Thermomigration Failure of Flip Chip Solder Joint Interconnects used in High Reliability Applications
The experimental study described herein investigates thermomigration of both eutectic Sn/Pb and lead free Sn/Ag/Cu solder joints, with the additional focus on the development of an Arrhenius failure model of time-to- failure as a function of temperature. Flip chip test vehicles were assembled with daisy chain die, with and without underfill, attached to ceramic and organic package substrates, using standard reflow processes. Three different under bump metallurgy technologies were investigated: sputtered thin film Al/NiV/Cu, thick electroplated nickel, and thick electroplated copper (i.e., copper pillars). The test vehicles were subjected to unbiased high temperature storage (HTS) testing with temperatures ranging from 125°C to 200°C. Failure was determined from continuity testing at regular intervals until an open circuit or high resistivity was detected. The results demonstrate the robustness of Al/NiV/Cu UBM at temperatures less than 130°C, and of the thick electroplated UBM at temperatures of 150°C. Based on the HTS test results, and corresponding analyses, a thermomigration failure model was generated for eutectic Sn/Pb and lead free Sn/Ag/Cu solder alloys using an Arrhenius-like fit to the failure data.
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