J. Bock, H. Schafer, H. Knapp, D. Zoschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, T. Meister
{"title":"高速SiGe:C双极技术","authors":"J. Bock, H. Schafer, H. Knapp, D. Zoschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, T. Meister","doi":"10.1109/IEDM.2001.979508","DOIUrl":null,"url":null,"abstract":"A SiGe:C bipolar technology with a narrow base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 106 GHz at a collector emitter breakdown voltage of 2.3 V, a maximum oscillation frequency of 145 GHz, and 6.5 ps gate delay demonstrate balanced transistor performance. State-of-the-art results for high-speed digital, analog, and low-power circuits are achieved.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"4 1","pages":"15.5.1-15.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":"{\"title\":\"High-speed SiGe:C bipolar technology\",\"authors\":\"J. Bock, H. Schafer, H. Knapp, D. Zoschg, K. Aufinger, M. Wurzer, S. Boguth, R. Stengl, R. Schreiter, T. Meister\",\"doi\":\"10.1109/IEDM.2001.979508\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A SiGe:C bipolar technology with a narrow base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 106 GHz at a collector emitter breakdown voltage of 2.3 V, a maximum oscillation frequency of 145 GHz, and 6.5 ps gate delay demonstrate balanced transistor performance. State-of-the-art results for high-speed digital, analog, and low-power circuits are achieved.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"4 1\",\"pages\":\"15.5.1-15.5.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"28\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979508\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A SiGe:C bipolar technology with a narrow base integrated into a double-polysilicon self-aligned transistor has been developed. A transit frequency of 106 GHz at a collector emitter breakdown voltage of 2.3 V, a maximum oscillation frequency of 145 GHz, and 6.5 ps gate delay demonstrate balanced transistor performance. State-of-the-art results for high-speed digital, analog, and low-power circuits are achieved.
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