U. Celano, Y.H. Chen, A. Minj, K. Banerjee, N. Ronchi, S. Mcmitchell, P. Van Marcke, P. Favia, T.-L. Wu, B. Kaczer, G. Van den bosch, J. van Houdt, P. van der Heide
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Probing the evolution of electrically active defects in doped ferroelectric HfO2 during wake-up and fatigue
We correlate the concentration and configuration of electrical defects in ferroelectric Si -doped HfO2 (FE- HfO2) with the electrical device performance during wake-up and fatigue regimes. To this end, we combine time-to-breakdown (TDDB), Kelvin probe force microscopy (KPFM), conductive atomic force microcopy (C-AFM) and Scalpel SPM, probing for the first time, the nanoscopic material variations as a function of device's field cycling behavior.
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