聚碳硅烷促进了生物废椰壳中SiC纳米线的生长

IF 1.3 4区 材料科学 Q3 MATERIALS SCIENCE, CERAMICS
Mangesh Lodhe, M. Balasubramanian
{"title":"聚碳硅烷促进了生物废椰壳中SiC纳米线的生长","authors":"Mangesh Lodhe, M. Balasubramanian","doi":"10.1080/17436753.2021.2023804","DOIUrl":null,"url":null,"abstract":"ABSTRACT The SiC nanowires were synthesised by the pyrolysis of a mixture of agricultural waste coconut shell (CS) and polycarbosilane (PCS) precursor at 1400°C. The characterisation of synthesised nanowires was carried out by X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystalline cubic β-SiC nanowires were found to be grown on <111> directions along (111) planes. The SiC nanowires had striped morphology containing stacking faults and twins as a planar defect. The extensive growth of SiC nanowires was owing to the continuous deposition of SiO and CO gaseous over the tiny SiC nuclei from the amorphous SiOC matrix. The vapour–solid (VS) and vapour–phase (VP) mechanisms have played the dominant role in nanowire formation. The 3C-SiC nanowires had striped morphology containing hexagonal 4H-SiC and 6H-SiC stacking faults.","PeriodicalId":7224,"journal":{"name":"Advances in Applied Ceramics","volume":null,"pages":null},"PeriodicalIF":1.3000,"publicationDate":"2022-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Polycarbosilane facilitated growth of SiC nanowires from biowaste coconut shell\",\"authors\":\"Mangesh Lodhe, M. Balasubramanian\",\"doi\":\"10.1080/17436753.2021.2023804\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ABSTRACT The SiC nanowires were synthesised by the pyrolysis of a mixture of agricultural waste coconut shell (CS) and polycarbosilane (PCS) precursor at 1400°C. The characterisation of synthesised nanowires was carried out by X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystalline cubic β-SiC nanowires were found to be grown on <111> directions along (111) planes. The SiC nanowires had striped morphology containing stacking faults and twins as a planar defect. The extensive growth of SiC nanowires was owing to the continuous deposition of SiO and CO gaseous over the tiny SiC nuclei from the amorphous SiOC matrix. The vapour–solid (VS) and vapour–phase (VP) mechanisms have played the dominant role in nanowire formation. The 3C-SiC nanowires had striped morphology containing hexagonal 4H-SiC and 6H-SiC stacking faults.\",\"PeriodicalId\":7224,\"journal\":{\"name\":\"Advances in Applied Ceramics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.3000,\"publicationDate\":\"2022-01-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advances in Applied Ceramics\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1080/17436753.2021.2023804\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Applied Ceramics","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1080/17436753.2021.2023804","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
引用次数: 3

摘要

以农业废椰壳(CS)和聚碳硅烷(PCS)前体为原料,在1400℃热解制备了SiC纳米线。通过x射线衍射、透射电子显微镜和拉曼光谱对合成的纳米线进行了表征。单晶立方β-SiC纳米线沿(111)平面方向生长。碳化硅纳米线呈条纹状,含有层错和孪晶等平面缺陷。SiC纳米线的广泛生长是由于SiO和CO气体不断沉积在非晶SiOC基体的微小SiC核上。气固(VS)和气相(VP)机制在纳米线的形成中起主导作用。3C-SiC纳米线呈条纹状,含有六边形的4H-SiC和6H-SiC层错。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polycarbosilane facilitated growth of SiC nanowires from biowaste coconut shell
ABSTRACT The SiC nanowires were synthesised by the pyrolysis of a mixture of agricultural waste coconut shell (CS) and polycarbosilane (PCS) precursor at 1400°C. The characterisation of synthesised nanowires was carried out by X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The single crystalline cubic β-SiC nanowires were found to be grown on <111> directions along (111) planes. The SiC nanowires had striped morphology containing stacking faults and twins as a planar defect. The extensive growth of SiC nanowires was owing to the continuous deposition of SiO and CO gaseous over the tiny SiC nuclei from the amorphous SiOC matrix. The vapour–solid (VS) and vapour–phase (VP) mechanisms have played the dominant role in nanowire formation. The 3C-SiC nanowires had striped morphology containing hexagonal 4H-SiC and 6H-SiC stacking faults.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Advances in Applied Ceramics
Advances in Applied Ceramics 工程技术-材料科学:硅酸盐
CiteScore
4.40
自引率
4.50%
发文量
17
审稿时长
5.2 months
期刊介绍: Advances in Applied Ceramics: Structural, Functional and Bioceramics provides international coverage of high-quality research on functional ceramics, engineering ceramics and bioceramics.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信