热释电及其它集成器件用溶胶-凝胶PZT薄膜的低温制备

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI:10.1109/ISAF.1996.602739

J. C. Gunter, S. Streiffer, A. Kingon

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引用次数: 1

摘要

采用溶胶-凝胶法制备了锆钛酸铅薄膜。样品在500℃的热板上退火。该技术产生的薄膜结晶成(111)有织构的钙钛矿。该薄膜的残余极化值为20.0 /spl mu/C/cm/sup 2/，矫顽力为44 kV/cm。薄膜的显微组织为细晶和柱状。测定样品的介电常数为1100。观察了影响结晶温度降低的因素。

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Low temperature preparation of sol-gel PZT thin films for pyroelectric and other integrated devices

Thin films of lead zirconate titanate (PZT) were prepared using a modified sol-gel technique. The samples were annealed on a hotplate at 500/spl deg/C. The technique yields films crystallized into (111) textured perovskite. The ferroelectric properties of the best film gave a remnant polarization value of 20.0 /spl mu/C/cm/sup 2/ and coercive field of 44 kV/cm. The microstructure of the film was determined to be fine grained and columnar. Permittivity for the sample was determined to be 1100. Indications of factors influencing the lowering of crystallization temperatures were observed.

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ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics

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