{"title":"近距离光学微传感器中集成光波导的线性光电探测器阵列","authors":"E. Budianu, R. Muller, L. Eftime, E. Manea","doi":"10.1109/SMICND.2008.4703347","DOIUrl":null,"url":null,"abstract":"Two linear photodetector arrays integrated with optical waveguide, designed as proximity/position optical microsensors are presented in this paper. Each of the two arrays consist in four silicon P+NN+ photodiodes, fabricated in an epitaxial silicon layer using standard Si device fabrication techniques and are integrated with SU8 optical waveguides. The optoelectrical characterization of every one photodetector of the linear array was realized by vertical illumination with a red radiation and good results have been obtained.","PeriodicalId":6406,"journal":{"name":"2008 IEEE International Conference on Semiconductor Electronics","volume":"79 1","pages":"129-132"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Linear photodetector arrays integrated with optical waveguides for proximity optical microsensor\",\"authors\":\"E. Budianu, R. Muller, L. Eftime, E. Manea\",\"doi\":\"10.1109/SMICND.2008.4703347\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Two linear photodetector arrays integrated with optical waveguide, designed as proximity/position optical microsensors are presented in this paper. Each of the two arrays consist in four silicon P+NN+ photodiodes, fabricated in an epitaxial silicon layer using standard Si device fabrication techniques and are integrated with SU8 optical waveguides. The optoelectrical characterization of every one photodetector of the linear array was realized by vertical illumination with a red radiation and good results have been obtained.\",\"PeriodicalId\":6406,\"journal\":{\"name\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"79 1\",\"pages\":\"129-132\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2008.4703347\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2008.4703347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Linear photodetector arrays integrated with optical waveguides for proximity optical microsensor
Two linear photodetector arrays integrated with optical waveguide, designed as proximity/position optical microsensors are presented in this paper. Each of the two arrays consist in four silicon P+NN+ photodiodes, fabricated in an epitaxial silicon layer using standard Si device fabrication techniques and are integrated with SU8 optical waveguides. The optoelectrical characterization of every one photodetector of the linear array was realized by vertical illumination with a red radiation and good results have been obtained.