超长基线干涉测量的X- Ka波段低温LNA模块

A. Fung, L. Samoska, J. Bowen, Steven Montanez, J. Kooi, M. Soriano, C. Jacobs, R. Manthena, D. Hoppe, A. Akgiray, R. Lai, X. Mei, M. Barsky
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引用次数: 1

摘要

我们报道了一种封装的低噪声放大器(LNA)模块的新结果,该模块的带宽为5至35 GHz,在10 K环境下工作时,低噪声温度性能为10 -18 K。LNA采用3级栅极长度低于50 nm,通道铟含量为100%的磷化铟(InP)高电子迁移率晶体管(hemt)。宽带低温lna对未来射电天文观测具有重要意义。据我们所知,这些结果代表了在5-35 GHz的宽带放大器中实现的最低噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
X- to Ka- Band Cryogenic LNA Module for Very Long Baseline Interferometry
We report a new result of a packaged low noise amplifier (LNA) module with wide bandwidth of 5 to 35 GHz and low noise temperature performance of 10 -18 K, while operated at 10 K ambient. The LNA used 3-stages of sub-50 nm gate length, 100% indium channel content indium phosphide (InP) high electron mobility transistors (HEMTs). Wideband cryogenic LNAs are important for future radio astronomy observatories. To our knowledge these results represent the lowest noise achieved in a wideband amplifier from 5–35 GHz.
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