{"title":"用全带模型研究应变si - p- mosfet中二维空穴的子带结构和输运","authors":"H. Nakatsuji, Y. Kamakura, K. Taniguchi","doi":"10.1109/IEDM.2002.1175941","DOIUrl":null,"url":null,"abstract":"The quantum confinement of the two-dimensional (2D) hole gas in the inversion layer of strained-Si p-MOSFETs is investigated theoretically. The hole mobility enhancement was found to originate from the suppressed inter-band scattering due to subband splitting and the reduced effective mass in the lowest subband with strain.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"28 1","pages":"727-730"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A study of subband structure and transport of two-dimensional holes in strained-Si p-MOSFETs using full-band modeling\",\"authors\":\"H. Nakatsuji, Y. Kamakura, K. Taniguchi\",\"doi\":\"10.1109/IEDM.2002.1175941\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The quantum confinement of the two-dimensional (2D) hole gas in the inversion layer of strained-Si p-MOSFETs is investigated theoretically. The hole mobility enhancement was found to originate from the suppressed inter-band scattering due to subband splitting and the reduced effective mass in the lowest subband with strain.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"28 1\",\"pages\":\"727-730\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175941\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175941","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A study of subband structure and transport of two-dimensional holes in strained-Si p-MOSFETs using full-band modeling
The quantum confinement of the two-dimensional (2D) hole gas in the inversion layer of strained-Si p-MOSFETs is investigated theoretically. The hole mobility enhancement was found to originate from the suppressed inter-band scattering due to subband splitting and the reduced effective mass in the lowest subband with strain.
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