分析大批量生产的晶圆流平数据,以确定内联缺陷的来源

IF 1.5 2区 物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
F. Khatkhatay
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引用次数: 1

摘要

摘要抽样限制的在线缺陷检查可能无法及时发现新的缺陷或较小的基线种群,特别是当缺陷具有独特的空间方向时。在这种情况下,考虑来自单元过程模块的故障检测和分类信号可能是有益的。光刻扫描仪通过一种称为调平的过程来确定晶圆片的最佳焦点位置。这项工作使用缺陷分析方法来检查焦点点数据,从晶圆找平中提取的光刻工具水平信号,并从大批量制造晶圆厂的连续四个前端光刻步骤中隔离在线缺陷的来源。范围扩大到检查在同一工具平台上处理的同一技术节点的所有岩性层。这项工作突出了挖掘焦点点数据作为内联缺陷监测的强大补充的巨大潜力。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analyzing wafer leveling data from high-volume manufacturing to identify the sources of inline defectivity
Abstract. Sampling-limited inline defect inspections may fall short in the timely detection of new defects or small baseline populations, especially when the defects have unique spatial orientations. In such cases, it may be beneficial to also consider fault detection and classification signals from unit process modules. Lithography scanners determine the optimal focus position for a wafer by a process called leveling. This work uses a defect analysis approach to examine focus spot data, a litho tool level signal extracted from wafer leveling, and to isolate the sources of inline defectivity from four consecutive front-end-of-line litho steps in a high-volume manufacturing fab. The scope is broadened to examine all litho layers from the same technology node that process on the same tool platform. This work highlights the immense potential of mining focus spot data as a powerful complement to inline defect monitoring.
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来源期刊
CiteScore
3.40
自引率
30.40%
发文量
0
审稿时长
6-12 weeks
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