基于衬底热电子注入实验的薄氧化物中陷阱辅助隧穿的光谱分析

F. Driussi, R. Iob, D. Esseni, L. Selmi, R. van Schaijk, F. Widdershoven
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引用次数: 2

摘要

本文提供了应力诱导陷阱对衬底热电子(SHE)注入的作用的实验证据。通过模拟和实验研究了福勒诺德海姆(FN)和热电子(HE)应力产生的陷阱的能量分布。结果表明,高能HE应力比FN应力产生更多的氧化陷阱。实验与模拟的对比也为陷阱辅助隧道机制的非弹性特性提供了新的证据。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Spectroscopic analysis of trap assisted tunneling in thin oxides by means of substrate hot electron injection experiments
In this paper we present experimental evidence of the contribution of stress induced traps to Substrate Hot Electron (SHE) injection. We investigate the energy distribution of traps generated by Fowler Nordheim (FN) and Hot Electron (HE) stress with the aid of simulations and experiments. Results suggest that HE stress generates more oxide traps at high energy with respect to FN stress. The comparison between experiments and simulations also provides a new additional evidence of the inelastic nature of the trap assisted tunneling mechanism.
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