Y. Yoon, Chang-Jo Kim, Junki Jang, K. Sung, H. Kim, Yunki Choi, Jeonghoon Ahn, Won-Chull Han, W. Jang, Rakhwan Kim, Don-Jin Shin, Juheon Kim, Y. Lim, H. Yim, W. Kang, Jongmil Youn
{"title":"ald - pvd TaN过渡层的通孔电阻分析","authors":"Y. Yoon, Chang-Jo Kim, Junki Jang, K. Sung, H. Kim, Yunki Choi, Jeonghoon Ahn, Won-Chull Han, W. Jang, Rakhwan Kim, Don-Jin Shin, Juheon Kim, Y. Lim, H. Yim, W. Kang, Jongmil Youn","doi":"10.1109/IITC51362.2021.9537395","DOIUrl":null,"url":null,"abstract":"We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also exhibit that the abnormal upper via resistance is consistent with the N/Ta increase by nitrogen diffusion. To overcome this issue, we investigate a hybrid TaN (PVD TaN on the top of ALD TaN), which prevents the nitrogen diffusion to the bottom of the upper via, resulting in the improvement of the upper via resistance.","PeriodicalId":6823,"journal":{"name":"2021 IEEE International Interconnect Technology Conference (IITC)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2021-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The via resistance analysis at ALD-to-PVD TaN transition layer\",\"authors\":\"Y. Yoon, Chang-Jo Kim, Junki Jang, K. Sung, H. Kim, Yunki Choi, Jeonghoon Ahn, Won-Chull Han, W. Jang, Rakhwan Kim, Don-Jin Shin, Juheon Kim, Y. Lim, H. Yim, W. Kang, Jongmil Youn\",\"doi\":\"10.1109/IITC51362.2021.9537395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also exhibit that the abnormal upper via resistance is consistent with the N/Ta increase by nitrogen diffusion. To overcome this issue, we investigate a hybrid TaN (PVD TaN on the top of ALD TaN), which prevents the nitrogen diffusion to the bottom of the upper via, resulting in the improvement of the upper via resistance.\",\"PeriodicalId\":6823,\"journal\":{\"name\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-07-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International Interconnect Technology Conference (IITC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC51362.2021.9537395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International Interconnect Technology Conference (IITC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC51362.2021.9537395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The via resistance analysis at ALD-to-PVD TaN transition layer
We demonstrate that when a thin ALD (atomic layer deposition) TaN as a barrier metal is deposited to the Cu interconnect, the upper via resistance is significantly increased. We also exhibit that the abnormal upper via resistance is consistent with the N/Ta increase by nitrogen diffusion. To overcome this issue, we investigate a hybrid TaN (PVD TaN on the top of ALD TaN), which prevents the nitrogen diffusion to the bottom of the upper via, resulting in the improvement of the upper via resistance.
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