{"title":"硅和富硅氮化薄膜中化学物质的振动光谱","authors":"K. O. Bugaev, A. Zelenina, V. Volodin","doi":"10.1155/2012/281851","DOIUrl":null,"url":null,"abstract":"Vibrational properties of hydrogenated silicon-rich nitride ( S i N 𝑥 : H ) of various stoichiometry ( 0 . 6 ≤ 𝑥 ≤ 1 . 3 ) and hydrogenated amorphous silicon ( a - S i : H ) films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1 1 3 0 ∘ C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a - S i : H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H 2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.","PeriodicalId":14329,"journal":{"name":"International Journal of Spectroscopy","volume":"2 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"43","resultStr":"{\"title\":\"Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films\",\"authors\":\"K. O. Bugaev, A. Zelenina, V. Volodin\",\"doi\":\"10.1155/2012/281851\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Vibrational properties of hydrogenated silicon-rich nitride ( S i N 𝑥 : H ) of various stoichiometry ( 0 . 6 ≤ 𝑥 ≤ 1 . 3 ) and hydrogenated amorphous silicon ( a - S i : H ) films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1 1 3 0 ∘ C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a - S i : H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H 2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.\",\"PeriodicalId\":14329,\"journal\":{\"name\":\"International Journal of Spectroscopy\",\"volume\":\"2 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"43\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Journal of Spectroscopy\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1155/2012/281851\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of Spectroscopy","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1155/2012/281851","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 43
摘要
不同化学计量的氢化富硅氮化物(S i N≥:H)的振动性质。6≤≤1。利用拉曼光谱和傅里叶变换红外光谱对氢化非晶硅(a - S i: H)薄膜进行了研究。采用11330°C氩气环境下5小时的炉内退火和脉冲激光退火来改变薄膜的结构。令人惊讶的是,经过如此高的热收支退火后,根据FTIR数据,几乎化学计量的氮化硅薄膜含有Si-H键形式的氢。通过分析Si-N键振动的FTIR数据,可以得出氮化硅部分结晶的结论。根据拉曼数据,氢浓度为15%及以下的a - Si: H薄膜主要含有Si-H化学物质,氢浓度为30-35%的薄膜主要含有si - h2化学物质。纳秒脉冲激光处理导致薄膜的结晶和脱氢。
Vibrational Spectroscopy of Chemical Species in Silicon and Silicon-Rich Nitride Thin Films
Vibrational properties of hydrogenated silicon-rich nitride ( S i N 𝑥 : H ) of various stoichiometry ( 0 . 6 ≤ 𝑥 ≤ 1 . 3 ) and hydrogenated amorphous silicon ( a - S i : H ) films were studied using Raman spectroscopy and Fourier transform infrared spectroscopy. Furnace annealing during 5 hours in Ar ambient at 1 1 3 0 ∘ C and pulse laser annealing were applied to modify the structure of films. Surprisingly, after annealing with such high-thermal budget, according to the FTIR data, the nearly stoichiometric silicon nitride film contains hydrogen in the form of Si–H bonds. From analysis of the FTIR data of the Si–N bond vibrations, one can conclude that silicon nitride is partly crystallized. According to the Raman data a - S i : H films with hydrogen concentration 15% and lower contain mainly Si–H chemical species, and films with hydrogen concentration 30–35% contain mainly Si–H 2 chemical species. Nanosecond pulse laser treatments lead to crystallization of the films and its dehydrogenization.