晶圆级细间距杂化键合:挑战与补救

V. Chidambaram, Yew Wing Leong, Qin Ren
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引用次数: 5

摘要

采用3μm的铜衬垫尺寸和6μm的间距实现了细髓杂化键合。TEOS SiO2用作介电材料。用孔隙率来表征氧化膜。在氧化膜孔隙率与键能之间建立了良好的相关性。讨论了化学机械抛光(CMP)过程控制的挑战,以实现一个狭窄的镀铜范围。建议适当调整键后退火温度,以实现Cu-Cu界面良好的扩散键合,同时减少剥离应力的产生。在同一键合晶圆内观察到不对准的差异。为了解决这一问题,提出了一种设计不同尺寸配合铜垫的新方法。通过这种设计方法,可以成功地抵消不对准,并实现更好的铜垫连通性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer Level Fine-Pitch Hybrid Bonding: Challenges and Remedies
Fine-pith hybrid bonding has been demonstrated using 3μm Cu pad size and 6μm pitch. TEOS SiO2 is used as a dielectric material. Oxide films were characterized in terms of porosities. A good correlation has been established between the % of porosity in the oxide film and the bonding energy. Chemical-mechanical polishing (CMP) process control challenges in order to achieve a narrow Cu dishing range has also been discussed. It has been recommended that the post-bond annealing temperature needs to be appropriately adjusted in order to achieve good diffusion bonding at the Cu-Cu interface and at the same time mitigate generation of peeling stresses. Disparity in misalignment is observed within the same bonded wafer. To resolve this, a novel solution of designing mating Cu pads of different dimensions is being proposed. Through this design approach, misalignment could be successfully offset and better Cu pad connectivity could be achieved.
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