Baoliang Liu, Hung-Chih Chin, H. Lou, Kuan‐Chang Chang, Xinnan Lin
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Charge Plasma-Based Junctionless FinFET for The Immune of Fin Sidewall Angle Variation
In this paper, the charge-plasma concept is applied to suppress the electrical characteristics variation induced by the variation of Fin sidewall angle (θ) in the conventional junctionless FinFET (CON-JLFinFET). The electrical characteristics of the conventional JLFinFET and charge plasma-based JLFinFET (CP-JLFinFET) with a trapezoidal cross section were investigated by three-dimensional numerical simulations. It is found that the CP-JLFinFET is insensitive to the variation of θ, which illustrates that the CP-JLFinFET may be a potential candidate for the further scaling of junctionless FinFET.