基于电荷等离子体的无结FinFET对翅片侧壁角变化的免疫

Baoliang Liu, Hung-Chih Chin, H. Lou, Kuan‐Chang Chang, Xinnan Lin
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引用次数: 0

摘要

本文采用电荷等离子体的概念来抑制传统无结FinFET (CON-JLFinFET)中由翅片边壁角(θ)变化引起的电特性变化。采用三维数值模拟方法研究了传统JLFinFET和基于电荷等离子体的梯形JLFinFET (CP-JLFinFET)的电学特性。发现CP-JLFinFET对θ的变化不敏感,这表明CP-JLFinFET可能是进一步缩放无结FinFET的潜在候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Charge Plasma-Based Junctionless FinFET for The Immune of Fin Sidewall Angle Variation
In this paper, the charge-plasma concept is applied to suppress the electrical characteristics variation induced by the variation of Fin sidewall angle (θ) in the conventional junctionless FinFET (CON-JLFinFET). The electrical characteristics of the conventional JLFinFET and charge plasma-based JLFinFET (CP-JLFinFET) with a trapezoidal cross section were investigated by three-dimensional numerical simulations. It is found that the CP-JLFinFET is insensitive to the variation of θ, which illustrates that the CP-JLFinFET may be a potential candidate for the further scaling of junctionless FinFET.
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