三维电荷阱NAND闪存中横向电荷迁移对数据保留和读取干扰的影响

2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT) Pub Date : 2020-11-03 DOI:10.1109/ICSICT49897.2020.9278015

Xueyang Peng, Fei Wang, Yachen Kong, Menghua Jia, Xuepeng Zhan, Yuan Li, Jiezhi Chen

{"title":"三维电荷阱NAND闪存中横向电荷迁移对数据保留和读取干扰的影响","authors":"Xueyang Peng, Fei Wang, Yachen Kong, Menghua Jia, Xuepeng Zhan, Yuan Li, Jiezhi Chen","doi":"10.1109/ICSICT49897.2020.9278015","DOIUrl":null,"url":null,"abstract":"For deeper insights into the reliabilities of 3D charge-trap (CT) flash memory, we investigated the impacts of lateral charge migration (LCM) on data retention (DR) and read disturb (RD) by TCAD simulations. With discussions on the influence of neighbor cells' states and defect levels, it is found that LCM caused charge accumulation under the external electric fields could be the dominant reason to explain experimentally observed abnormal RD. Our results strongly suggest that appropriate read cycling could be an effective way to retrieve threshold voltage (Vth) down-shifts during data retention.","PeriodicalId":6727,"journal":{"name":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","volume":"24 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Impacts of Lateral Charge Migration on Data Retention and Read Disturb in 3D Charge-trap NAND Flash Memory\",\"authors\":\"Xueyang Peng, Fei Wang, Yachen Kong, Menghua Jia, Xuepeng Zhan, Yuan Li, Jiezhi Chen\",\"doi\":\"10.1109/ICSICT49897.2020.9278015\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For deeper insights into the reliabilities of 3D charge-trap (CT) flash memory, we investigated the impacts of lateral charge migration (LCM) on data retention (DR) and read disturb (RD) by TCAD simulations. With discussions on the influence of neighbor cells' states and defect levels, it is found that LCM caused charge accumulation under the external electric fields could be the dominant reason to explain experimentally observed abnormal RD. Our results strongly suggest that appropriate read cycling could be an effective way to retrieve threshold voltage (Vth) down-shifts during data retention.\",\"PeriodicalId\":6727,\"journal\":{\"name\":\"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)\",\"volume\":\"24 1\",\"pages\":\"1-3\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT49897.2020.9278015\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT49897.2020.9278015","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

为了更深入地了解3D电荷阱(CT)闪存的可靠性，我们通过TCAD模拟研究了横向电荷迁移(LCM)对数据保留(DR)和读取干扰(RD)的影响。通过对相邻细胞状态和缺陷水平的影响的讨论，我们发现LCM在外电场下引起的电荷积累可能是解释实验观察到的异常RD的主要原因。我们的结果强烈表明，适当的读取循环可能是恢复数据保留过程中阈值电压(Vth)降移的有效方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Impacts of Lateral Charge Migration on Data Retention and Read Disturb in 3D Charge-trap NAND Flash Memory

For deeper insights into the reliabilities of 3D charge-trap (CT) flash memory, we investigated the impacts of lateral charge migration (LCM) on data retention (DR) and read disturb (RD) by TCAD simulations. With discussions on the influence of neighbor cells' states and defect levels, it is found that LCM caused charge accumulation under the external electric fields could be the dominant reason to explain experimentally observed abnormal RD. Our results strongly suggest that appropriate read cycling could be an effective way to retrieve threshold voltage (Vth) down-shifts during data retention.

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2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)

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