d0-d半Heusler KCrSb化合物半金属丰度的第一性原理计算:用于能量和自旋电子应用的新材料

Samiha Dergal, H. Rached, A. Ait Belkacem, Hanane Saib, Tarik Hadji, Ahmed Azzouz Rached
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引用次数: 0

摘要

在本研究中,利用自旋极化第一原理计算研究了新型d0-d半Heusler (d0-d HH) KCrSb化合物的结构、电子、磁、力学和动力学性质。使用了两种不同的方法:广义梯度近似法(GGA)和改进版的Becke-Johnson GGA法(mBJ-GGA)。稳定性研究揭示了一种能量、力学和动态稳定的d0-d HH KCrSb。磁电子研究表明,该化合物在铁磁状态下具有半金属性质。GGA和mBJ - GGA的半金属间隙分别为0.9 eV和1.2 eV。发现该化合物的磁矩为整数,且符合sllater - pauling规则MT=(ZT−8)$M_{\text{T}} = \left(\right. Z_{\text{T}} - 8 \left.\right) \left(\mu\right)_{\text{B}}$ μB。因此,d0-d HH KCrSb化合物是自旋电子和光电子器件的潜在候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First‐Principles Calculation of the Half‐Metallicity in the d0–d Half‐Heusler KCrSb Compound: Novel Material for Energy and Spintronic Applications
In this study, the structural, electronic, magnetic, mechanical, and dynamical properties of the new d0–d half‐Heusler (d0–d HH) KCrSb compound are investigated using spin‐polarized first‐principles calculations. Two distinct approaches are used: generalized gradient approximation (GGA) and the modified version of the Becke–Johnson GGA (mBJ–GGA). The stability investigations reveal an energetically, mechanically, and dynamically stable d0–d HH KCrSb. The magneto‐electronic research shows a stable compound in the ferromagnetic state with a half‐metallic behavior. The half‐metallic gap is 0.9 and 1.2 eV from GGA and mBJ‐GGA, respectively. It is found that the magnetic moment of the compound is an integer and follows the Slater–Pauling rule MT=(ZT−8)$M_{\text{T}} = \left(\right. Z_{\text{T}} - 8 \left.\right) \left(\mu\right)_{\text{B}}$μB. So, the d0–d HH KCrSb compound is a potential candidate for spintronic and optoelectronic devices.
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