Island-cap interface misfit modulated carrier mechanisms in p-i-n epitaxial quantum dot photovoltaic devices

The lattice misfit at the island-cap interface in two In0.15Ga0.85As p-i-n devices, with 5 layers of InAs quantum dots (QDs), was modified by depositing 2.1 and 3.2 ML of InAs while maintaining near identical capping layers. The device with 35 ± 3 nm island size distribution exhibited photoluminescence activity in the near infra-red range from 975 to 1150 nm while the device with 42 ± 12 nm size islands recorded lower PL intensity over a narrower range of 1000-1100 nm suggesting (a) increased island-cap interface misfit, (b) truncation of the islands, and (c) generation of structural defects.