磁中性环放电等离子体中无扇贝的TSV刻蚀新方法

2012 IEEE 62nd Electronic Components and Technology Conference Pub Date : 2012-07-30 DOI:10.1109/ECTC.2012.6248923

Y. Morikawa, T. Murayama, T. Sakuishi, M. Yoshii, K. Suu

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引用次数: 18

摘要

近年来，高性能LSI的“2.5D硅中间层”和“全3D堆叠”技术备受关注，因为该技术可以解决使用TSV (Through silicon Via)电连接堆叠LSI的互连问题。与传统的二维器件相比，2.5D和3D Si集成具有封装密度高、线长小、运行速度快、功耗低、并行处理可行性高等优点。

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A novel scallop free TSV etching method in magnetic neutral loop discharge plasma

In recent years, "2.5D silicon interposers" and "Full 3D stacked" technology for high-performance LSI has attracted much attention since this technology can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked LSI. 2.5D and 3D Si integration has great advantages over conventional two-dimensional devices such as high packaging density, small wire length, high-speed operation, low power consumption, and high feasibility for parallel processing.

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2012 IEEE 62nd Electronic Components and Technology Conference

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