利用HJT 2.0减轻硅异质结电池的性能和成本限制

2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) Pub Date : 2019-06-01 DOI:10.1109/PVSC40753.2019.8980666

D. Bätzner, J. Cardoso, C. Aeby, W. Frammelsberger, B. Strahm, P. Papet, B. Legradic, D. Lachenal, R. Kramer, T. Kössler, L. Andreetta, S. Pitteloud, N. Holm

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引用次数: 2

摘要

在考虑大规模生产的硅异质结技术(HJT)时，最常表达的保留意见与电池正面的标准TCO即薄氧化铟锡(ITO)构成的性能和成本限制有关。我们通过HJT 2.0概念解决了这些问题，其中前电极由双层ITO制成，并辅以氮化硅(SiN)层。由于电池电流的提高，该电池的效率提高了0.2%，并且在拥有成本(CoO)方面节省了30-40%的成本。

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Alleviating performance and cost constraints in silicon heterojunction cells with HJT 2.0

When considering silicon heterojunction technology (HJT) for mass production the most frequently expressed reservations are related to the performance and cost constraints the standard TCO on the cell front side namely thin indium tin oxide (ITO) constitutes. We address these concerns with our HJT 2.0 concept in which the front electrode is made of a bi-layer of ITO that is supplemented by a silicon nitride (SiN) layer. This cell concept was developed to yield an increase in efficiency of typically 0.2% absolute due to improved cell current and a cost saving in the range of 30-40% with respect to cost of ownership (CoO).

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2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)

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