系统级SoC近场(NF)排放:模拟与测量的相关性

R. Murugan, S. Mukherjee, M. Mi, L. Pauc, C. Girardi, D. Gope, D. de Araujo, S. Chakraborty, V. Jandhyala
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引用次数: 5

摘要

随着片上系统(SoC)设计迁移到28nm及以上工艺节点,芯片封装印刷电路板(PCB)的电磁(EM)协同作用变得至关重要,需要准确高效的表征和验证。本文提出了一种基于边界元的麦克斯韦方程组的快速、可扩展、并行化的积分EM解。对于完整的EM表征,全波公式的准确性已在规范结构和现实世界的3-D系统(即芯片+封装+ PCB)上得到验证。数值模拟结果与实测结果具有良好的相关性。还给出了该公式在45nm SoC上的高速数字和模拟串行接口适用性的几个示例。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
System-level SoC near-field (NF) emissions: Simulation to measurement correlation
As System-on-Chip (SoC) designs migrate to 28nm process node and beyond, the electromagnetic (EM) co-interactions of the Chip-Package-Printed Circuit Board (PCB) becomes critical and require accurate and efficient characterization and verification. In this paper a fast, scalable, and parallelized boundary element based integral EM solutions to Maxwell equations is presented. The accuracy of the full-wave formulation, for complete EM characterization, has been validated on both canonical structures and real-world 3-D system (viz. Chip + Package + PCB). Good correlation between numerical simulation and measurement has been achieved. A few examples of the applicability of the formulation to high speed digital and analog serial interfaces on a 45nm SoC are also presented.
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