K. Kuhn, M. Agostinelli, S. Ahmed, S. Chambers, S. Cea, S. Christensen, P. Fischer, J. Gong, C. Kardas, T. Letson, L. Henning, A. Murthy, H. Muthali, B. Obradovic, P. Packan, S. Pae, I. Post, S. Putna, K. Raol, A. Roskowski, R. Soman, T. Thomas, P. Vandervoorn, M. Weiss, I. Young
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A 90 nm communication technology featuring SiGe HBT transistors, RF CMOS, precision R-L-C RF elements and 1 /spl mu/m2 6-T SRAM cell
This paper presents a highly-manufacturable process technology featuring SiGe HBT devices fully integrated into a 90 nm leading-edge high performance CMOS technology. The technology was developed on a 300 mm wafer platform, and supports process elements including RF CMOS devices, a MIM capacitor, precision resistors, high-Q inductors and varactors.