AsH3等离子体浸没离子注入硅的模拟

2014 20th International Conference on Ion Implantation Technology (IIT) Pub Date : 2014-10-30 DOI:10.1109/IIT.2014.6940004

A. Burenkov, J. Lorenz, Y. Spiegel, F. Torregrosa

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引用次数: 2

摘要

采用离子束服务公司的pusl工具将AsH3等离子体注入(100)晶体硅中。获得了最大浓度超过1×1022 cm-3、在1×1018 cm-3浓度下穿透深度小于10 nm的超浅砷掺杂谱。两个模拟模型被用来描述观察到的砷分布:一个是作者早期为BF3等离子体开发的模型，另一个是解释AsH3等离子体特征的新模型。

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Simulation of AsH3 plasma immersion ion implantation into silicon

Plasma immersion ion implantation from AsH₃ plasma into (100) crystalline silicon was performed using the PULSION tool of Ion Beam Services. Ultra-shallow arsenic doping profiles with maximum concentrations in excess of 1×10²² cm^-3 and penetration depths below 10 nm at a concentration of 1×10¹⁸ cm^-3 were obtained. Two simulation models were applied to describe the observed arsenic profiles: the one developed by the authors earlier for BF₃ plasma and a new one that accounts for the specifics of AsH₃ plasma.

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2014 20th International Conference on Ion Implantation Technology (IIT)

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