带有纳米机电(NEM)继电器的浮点单元设计

S. Dutta, V. Stojanović
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引用次数: 1

摘要

与CMOS相比,由纳米机电(NEM)继电器制成的数字电路具有能效优势,因为它们具有零泄漏功率,并且可以提供与CMOS竞争的电路级性能。在本文中,我们展示了新的继电器电路设计技术如何与我们已经在较小的继电器块上演示的技术相结合,使我们能够优化最复杂的算术单元,浮点单元(FPU)的设计。在同等规模的工艺中,研究了具有NEM继电器的FPU设计的能量、性能和面积权衡,并将其与最先进的CMOS设计进行了比较。FPU的关键路径瓶颈电路,尤其是前置零检测器(LZD)和前置零预估器(LZA),采用新的继电器定制电路技术进行了优化。这些优化将NEM继电器FPU延迟从最优cmos风格实现中的71个机械延迟减少到广义自定义NEM继电器实现中的16个机械延迟。在90nm制程节点上,采用NEM继电器设计的FPU与采用CMOS设计的FPU相比,预计每次操作的能量降低15倍。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Floating-point unit design with nano-electro-mechanical (NEM) relays
Digital circuits made with nano-electro-mechanical (NEM) relays offer energy-efficiency benefits over CMOS since they have zero leakage power and can offer circuit level performance that competes with CMOS. In this paper we show how new relay circuit design techniques combined with those we already demonstrated on smaller relay blocks enable us to optimize the design of the most complex arithmetic unit, the floating-point unit (FPU). The energy, performance, and area trade-offs of FPU designs with NEM relays are examined and compared with those of state-of-the-art CMOS designs in an equivalent scaled process. Circuits that are critical path bottlenecks for the FPU specifically, most notably the leading zero detector (LZD) and leading zero anticipator (LZA), are optimized with new relay-tailored circuit techniques. These optimizations reduce the NEM relay FPU latency from 71 mechanical delays in an optimal-CMOS-style implementation to 16 mechanical delays in a generalized custom NEM relay implementation. In a 90 nm process node, the FPU designed with NEM relays is projected to achieve 15× lower energy per operation compared to the FPU designed with CMOS.
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