{"title":"超薄栅极介质中NBTI的形成机理-氮源机制","authors":"Y. Mitani, M. Nagamine, H. Satake, A. Toriumi","doi":"10.1109/IEDM.2002.1175891","DOIUrl":null,"url":null,"abstract":"We have investigated the mechanism of negative bias temperature (NBT) degradation of p/sup +/-gate p-MOSFETs having SiON and SiO/sub 2/ films. As a result, it was found that NBT degradation of SiO/sub 2/ is improved by fluorine incorporation, while no effect is observed in that of SiON, and that the activation energy of NBT degradation in SiON is lower than that in SiO/sub 2/. From these experimental results, it is inferred that nitrogen-originated NBT degradation dominates NBT degradation in SiON. It was also found that non-energetic holes existing in the inversion layer contribute to NBT degradation for both SiON and SiO/sub 2/ films, and that the oxide field is indispensable for NBT degradation.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"17 1","pages":"509-512"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"83","resultStr":"{\"title\":\"NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON\",\"authors\":\"Y. Mitani, M. Nagamine, H. Satake, A. Toriumi\",\"doi\":\"10.1109/IEDM.2002.1175891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated the mechanism of negative bias temperature (NBT) degradation of p/sup +/-gate p-MOSFETs having SiON and SiO/sub 2/ films. As a result, it was found that NBT degradation of SiO/sub 2/ is improved by fluorine incorporation, while no effect is observed in that of SiON, and that the activation energy of NBT degradation in SiON is lower than that in SiO/sub 2/. From these experimental results, it is inferred that nitrogen-originated NBT degradation dominates NBT degradation in SiON. It was also found that non-energetic holes existing in the inversion layer contribute to NBT degradation for both SiON and SiO/sub 2/ films, and that the oxide field is indispensable for NBT degradation.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"17 1\",\"pages\":\"509-512\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"83\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON
We have investigated the mechanism of negative bias temperature (NBT) degradation of p/sup +/-gate p-MOSFETs having SiON and SiO/sub 2/ films. As a result, it was found that NBT degradation of SiO/sub 2/ is improved by fluorine incorporation, while no effect is observed in that of SiON, and that the activation energy of NBT degradation in SiON is lower than that in SiO/sub 2/. From these experimental results, it is inferred that nitrogen-originated NBT degradation dominates NBT degradation in SiON. It was also found that non-energetic holes existing in the inversion layer contribute to NBT degradation for both SiON and SiO/sub 2/ films, and that the oxide field is indispensable for NBT degradation.
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