Ag-GeSe3-Ni CBRAM器件的TCAD模型

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870539

K. Muthuseenu, E. C. Hylin, H. Barnaby, P. Apsangi, M. Kozicki, G. Schlenvogt, Mark A. Townsend

{"title":"Ag-GeSe3-Ni CBRAM器件的TCAD模型","authors":"K. Muthuseenu, E. C. Hylin, H. Barnaby, P. Apsangi, M. Kozicki, G. Schlenvogt, Mark A. Townsend","doi":"10.1109/SISPAD.2019.8870539","DOIUrl":null,"url":null,"abstract":"A model for Ag-GeSe3-Ni Conductive Bridge Random Access Memory (CBRAM) device is developed using Technology Computer-Aided Design (TCAD) simulations. A new field-dependent ion mobility saturation model that combines Mott-Gurney ionic transport and a high-field saturation ionic drift velocity model is implemented. Also, an electron mobility model for charge transport through the conductive filament is presented. The model simulates forming and dissolving of the filament at different bias conditions. The simulation results of CBRAM I-V hysteresis curves match well to the experimental data.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"451 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"TCAD Model for Ag-GeSe3-Ni CBRAM Devices\",\"authors\":\"K. Muthuseenu, E. C. Hylin, H. Barnaby, P. Apsangi, M. Kozicki, G. Schlenvogt, Mark A. Townsend\",\"doi\":\"10.1109/SISPAD.2019.8870539\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model for Ag-GeSe3-Ni Conductive Bridge Random Access Memory (CBRAM) device is developed using Technology Computer-Aided Design (TCAD) simulations. A new field-dependent ion mobility saturation model that combines Mott-Gurney ionic transport and a high-field saturation ionic drift velocity model is implemented. Also, an electron mobility model for charge transport through the conductive filament is presented. The model simulates forming and dissolving of the filament at different bias conditions. The simulation results of CBRAM I-V hysteresis curves match well to the experimental data.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"451 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2019.8870539\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870539","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用计算机辅助设计(TCAD)仿真技术建立了Ag-GeSe3-Ni导电桥随机存取存储器(CBRAM)器件的模型。提出了一种结合Mott-Gurney离子输运和高场饱和离子漂移速度模型的场相关离子迁移率饱和模型。此外，还提出了电荷通过导电丝的电子迁移率模型。该模型模拟了不同偏压条件下灯丝的形成和溶解过程。CBRAM I-V滞回曲线的仿真结果与实验数据吻合较好。

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TCAD Model for Ag-GeSe3-Ni CBRAM Devices

A model for Ag-GeSe3-Ni Conductive Bridge Random Access Memory (CBRAM) device is developed using Technology Computer-Aided Design (TCAD) simulations. A new field-dependent ion mobility saturation model that combines Mott-Gurney ionic transport and a high-field saturation ionic drift velocity model is implemented. Also, an electron mobility model for charge transport through the conductive filament is presented. The model simulates forming and dissolving of the filament at different bias conditions. The simulation results of CBRAM I-V hysteresis curves match well to the experimental data.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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