电注入光子带隙微腔光源

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-12-01 DOI:10.1109/LEOS.2001.969180

P. Bhattacharya, W. Zhou, J. Sabarinathan, P. C. Yu

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引用次数: 1

摘要

采用金属-有机气相外延法在GaAs衬底上生长器件异质结构。如图所示，它本质上是由底部n-DBR和顶部空气-半导体界面形成的具有低Q垂直腔的InGaAs MQW /spl λ /-腔。为了使载流子更有效地进入中心光子带隙区，引入了氧化物约束层。

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Electrically injected photonic bandgap microcavity light sources

The device heterostructure was grown by metal-organic vapor phase epitaxy on GaAs substrate. As shown schematically it is essentially an InGaAs MQW /spl lambda/-cavity formed by bottom n-DBR and top air-semiconductor interface with a low Q vertical cavity. Oxide confinement layer is incorporated to funnel the carriers more efficiently into the center photonic band gap region.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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