基于单一记忆存储器的TTL NOT逻辑

IF 0.1 Q4 MULTIDISCIPLINARY SCIENCES
Hirakjyoti Choudhury, Suvankar Paul, Deepjyoti Deb, Prachuryya Subash Das, Rupam Goswami
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引用次数: 0

摘要

本文提出了一种基于单一忆阻器的非逻辑门电路,并在提取电阻的基础上对不同生物忆阻样品进行了分析。逻辑电路中忆阻器的简单电阻电压表示用于制定一种根据TTL电压值调整电路参数的方法。逻辑电路由两个电阻和忆阻器串联而成。输入端连接到忆阻器的一端,输出端穿过第二电阻和忆阻器的串联连接。该方法包括两个步骤,其中,在第一步中,检查逻辑“低”ttinput电压,在第二步中,评估电路的逻辑“高”ttinput电压。该方法表明,“高”ttl输入有一个mínimum电压值,超过该电压值,输出不属于逻辑“低”ttl输出。所提出的技术可以扩展到评估基于单忆阻器的非逻辑的新型忆阻材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Single Memristorbased TTL NOT logic
This article presents a NOT logic gate circuit based on a single memristor, and analyzes it for different biological memristive samples based on extracted resistances. The simple resistorvoltage representation of the memristor in the logic circuit is used to formulate a methodology to tune the parameters of the circuit in accordance with TTL voltage values. The logic circuit consists of two resistors in series with the memristor. The input is connected to one end of the memristor, and the output is drawn across the series connection of the second resistor, and the memristor. The methodology comprises of two steps, where, in the first step, the logic ‘low’ TTLinput voltages are examined, and in the second step, the circuit is evaluated for logic ‘high’ TTLinput voltages. The methodology reveals that there is a mínimum voltage value of ‘high’ TTL-input beyond which the output does not fall within the logic ‘low’ TTL-output. The proposed technique may be extended to evaluate novel memristive materials for single memristor-based NOT logic.
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来源期刊
Tecnologia en Marcha
Tecnologia en Marcha MULTIDISCIPLINARY SCIENCES-
自引率
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发文量
93
审稿时长
28 weeks
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