用于中波段太阳能电池的ii型Ge/Si量子点超晶格

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) Pub Date : 2013-06-16 DOI:10.1109/PVSC.2013.6744314

Weiguo Hu, M. E. Fauzi, M. Igarashi, A. Higo, Ming-Yi Lee, Yiming Li, N. Usami, S. Samukawa

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引用次数: 1

摘要

锗/硅ii型量子点(QD)已被开发用于全硅中间波段太阳能电池(IBSC)。采用自顶向下的方法制备了超高质量的量子点超晶格。采用一种新开发的三维有限元方法来解决实现实际结构的几个关键设计问题。理论计算表明，当点间距在0.5 ~ 4 nm范围内时，重空穴态可以作为理想的中间带。基于这种超晶格的IBSC极大地提高了浓缩应用的转换效率。对于单太阳应用，h -钝化硅和/或再生非晶碳化硅有很大的潜力来提高转换效率。

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Type-II Ge/Si quantum dot superlattice for intermediate-band solar cell applications

A Ge/Si type-II quantum dot (QD) has been developed for use in all-Si intermediate-band solar cell (IBSC) applications. A top-down process is used to fabricate the ultra-high-quality QD superlattice. A newly developed 3D finite element method was used to solve several key design problems in achieving a practical structure. Theoretical calculations revealed that a heavy hole state can act as an ideal intermediate band when the interdot space ranges from 0.5 to 4 nm. An IBSC based on this superlattice dramatically enhanced conversion efficiency for concentration applications. For one-sun applications, H-passivizing Si and/or regrowthing amorphous SiC have a great potential to improve the conversion efficiency.

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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

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