采用0.35 μm以上CMOS工艺的10 μm厚poly-SiGe陀螺仪

2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS) Pub Date : 2007-01-01 DOI:10.1109/MEMSYS.2007.4433007

A. Scheurle, T. Fuchs, K. Kehr, C. Leinenbach, S. Kronmuller, A. Arias, J. Ceballos, M. A. Lagos, J. M. Mora, J. M. Muñoz, A. Ragel, J. Ramos, S. Van Aerde, J. Spengler, A. Mehta, A. Verbist, B. du Bois, A. Witvrouw

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引用次数: 13

摘要

本文介绍了一种采用表面微加工技术制造的单片集成欧米茄陀螺仪。作为功能结构，在标准高压0.35 μ m CMOS-ASIC上加工了10 μ m厚的硅锗层。飞机双翼陀螺仪的驱动和感应是全电容式的。在连续时间基带传感中，运动测量也是完全电容化的。为了进行表征，陀螺仪芯片被安装在带有辅助电路的面包板上。在3毫巴的工作条件下，噪声底限为0.01度/平方度(Hz)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A 10 μm thick poly-SiGe gyroscope processed above 0.35 μm CMOS

This paper describes a monolithically integrated omegaz-gyroscope fabricated in a surface-micromaching technology. As functional structure, a 10 mum thick Silicon-Germanium layer is processed above a standard high voltage 0.35 mum CMOS-ASIC. Drive and Sense of the in plane double wing gyroscope is fully capacitively. Measurement of movement is also done fully capacitively in continuous-time baseband sensing. For characterization, the gyroscope chip is mounted on a breadboard with auxiliary circuits. A noise floor of 0.01 degs/sqrt(Hz) for operation at 3 mBar is achieved.

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来源期刊

2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)

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