Elizabeth Palmiotti, S. Karki, Benjamin Belfore, Sina Soltanmohammad, G. Rajan, S. Marsillac, A. Rockett
{"title":"溴化物蒸汽处理共蒸发CuInxGa(1-x)Se2薄膜沉积后的再结晶","authors":"Elizabeth Palmiotti, S. Karki, Benjamin Belfore, Sina Soltanmohammad, G. Rajan, S. Marsillac, A. Rockett","doi":"10.1109/PVSC40753.2019.8980803","DOIUrl":null,"url":null,"abstract":"CIGS films deposited at 400°C onto molybdenum-coated soda-lime glass substrates by co-evaporation were annealed in InBr3 vapors or CuBr with Se vapors. The treatments were conducted at 400°C, 450°C, or 500°C for one hour. The InBr3 treatments above 400°C and CuBr with Se treatments at 500°C resulted in increased grain size, improved crystallinity, and a decrease in Cu2Se phase. Annealed samples also exhibited large surface facets. CIGS films deposited at 350°C were also investigated in InBr3 and CuBr with Se vapors at 450°C for one hour. These treatments resulted in increased grain size and less deviations from the as-deposited composition.","PeriodicalId":6749,"journal":{"name":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","volume":"45 1","pages":"1863-1866"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Post-Deposition Recrystallization of Co-Evaporated CuInxGa(1-x)Se2 Films by Bromide Vapor Treatments\",\"authors\":\"Elizabeth Palmiotti, S. Karki, Benjamin Belfore, Sina Soltanmohammad, G. Rajan, S. Marsillac, A. Rockett\",\"doi\":\"10.1109/PVSC40753.2019.8980803\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CIGS films deposited at 400°C onto molybdenum-coated soda-lime glass substrates by co-evaporation were annealed in InBr3 vapors or CuBr with Se vapors. The treatments were conducted at 400°C, 450°C, or 500°C for one hour. The InBr3 treatments above 400°C and CuBr with Se treatments at 500°C resulted in increased grain size, improved crystallinity, and a decrease in Cu2Se phase. Annealed samples also exhibited large surface facets. CIGS films deposited at 350°C were also investigated in InBr3 and CuBr with Se vapors at 450°C for one hour. These treatments resulted in increased grain size and less deviations from the as-deposited composition.\",\"PeriodicalId\":6749,\"journal\":{\"name\":\"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)\",\"volume\":\"45 1\",\"pages\":\"1863-1866\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC40753.2019.8980803\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC40753.2019.8980803","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Post-Deposition Recrystallization of Co-Evaporated CuInxGa(1-x)Se2 Films by Bromide Vapor Treatments
CIGS films deposited at 400°C onto molybdenum-coated soda-lime glass substrates by co-evaporation were annealed in InBr3 vapors or CuBr with Se vapors. The treatments were conducted at 400°C, 450°C, or 500°C for one hour. The InBr3 treatments above 400°C and CuBr with Se treatments at 500°C resulted in increased grain size, improved crystallinity, and a decrease in Cu2Se phase. Annealed samples also exhibited large surface facets. CIGS films deposited at 350°C were also investigated in InBr3 and CuBr with Se vapors at 450°C for one hour. These treatments resulted in increased grain size and less deviations from the as-deposited composition.
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