热影响下Cu膜表面形貌动力学的实验与理论研究

G. Kumar, Santanu Ghosh, R. P. Yadav, U. B. Singh, A. K. Mittal, P. Srivastava
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引用次数: 0

摘要

利用实验结果和Higuchi算法,对不同温度下氧环境下退火铜薄膜表面形貌的演变和氧化物的形成进行了细致的研究。首先,采用热蒸发系统沉积厚度为27 nm的铜薄膜,然后在150℃至350℃的温度范围内,以50℃的温度间隔在氧气环境中氧化1小时。利用原子力显微镜(AFM)、x射线衍射仪(XRD)和紫外可见光谱(UV-VIS)对样品的形貌、结构和光学性质进行了研究。XRD结果表明,温度在250 ~ 350℃范围内升高,Cu2O相完全转变为CuO相。用Tauc图计算了不同温度下退火铜膜的光学带隙,它指示了铜和氧化铜的形成。在薄膜表面的AFM图像中可以看到明显的形态学变化。此外,采用Higuchi表面形貌算法,通过界面宽度(w)、Hurst指数(H)、分形维数(Df)等参数,观察氧环境中温度变化对表面形貌的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dynamics of Surface Morphology of Cu Film Under the Influence of Heat: An Experimental and Theoretical Study
The evolution of surface morphology and formation of oxides is meticulously studied in annealed copper thin films in oxygen environment at various temperature using experimental results and Higuchi's algorithm. Initially, thin film of copper is deposited using thermal evaporation system having thickness of 27 nm and subsequently oxidized by annealing in temperatures range of 150 °C to 350 °C with a temperature interval of 50 °C in oxygen environment for one hour. The studies of morphological, structural and optical properties of samples are performed by atomic force microscopy (AFM), X-Ray diffraction (XRD) and UV-VIS spectroscopy respectively. XRD results reveal that Cu2O phase changes completely to CuO phase by rising in the temperature from 250 to 350 °C. The optical band gap of annealed copper films at different temperatures is calculated by Tauc's plot and it indicates the formation of Cupreous and Cupric oxide. A clear morphological variation is seen in AFM images of the surface of films. Additionally, Higuchi's algorithm for surface morphology is performed to observe the change in surface morphology under the effect of temperature variation in oxygen environment by various parameters e.g. interface width (w), Hurst exponent (H) and fractal dimension (Df).
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