自开关二极管热效应的蒙特卡罗分析

2013 Spanish Conference on Electron Devices Pub Date : 2013-03-21 DOI:10.1109/CDE.2013.6481338

J. Millithaler, I. Íñiguez-de-la-Torre, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière

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引用次数: 3

摘要

利用非对称平面氮化镓自开关二极管实现了利用甚高频氮化镓振荡产生太赫兹辐射的尝试。在这项工作中，我们比较了实际设备的测量静态行为与通过蒙特卡罗模拟进行的计算。分析了温度对固态硬盘I-V特性和高频振荡的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Monte Carlo analysis of thermal effects in self-switching diodes

An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.

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2013 Spanish Conference on Electron Devices

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