射频模块压印通模孔(i-TMV)隔层电磁干扰屏蔽效果验证

Motohiro Negishi, T. Shibata, Xinrong Li, N. Suzuki
{"title":"射频模块压印通模孔(i-TMV)隔层电磁干扰屏蔽效果验证","authors":"Motohiro Negishi, T. Shibata, Xinrong Li, N. Suzuki","doi":"10.4071/1085-8024-2021.1.000303","DOIUrl":null,"url":null,"abstract":"\n In order to form a compartmental EMI shielding structure for radio frequency (RF) modules, we have proposed the new process named ”imprint-Through Mold Via (i-TMV)”, which could be fabricated by imprinting with a silicon master and filling with conductive paste. In this work, a test coupon was fabricated and EMI shielding effect of the i-TMV was actually evaluated by measurement of the electric field strength that leaked through from via array. As a result, it was found that the shielding effect was 23.6 dB at 4 GHz, which was close to the completely shielded value with a metal cap (25.6 dB). This result indicated that the i-TMV was significantly effective as a compartmental EMI shielding for the Sub-6 band application.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"7 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Verification of Compartmental Electromagnetic Interference Shielding Effect with imprint-Through Mold Via (i-TMV) for RF modules\",\"authors\":\"Motohiro Negishi, T. Shibata, Xinrong Li, N. Suzuki\",\"doi\":\"10.4071/1085-8024-2021.1.000303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n In order to form a compartmental EMI shielding structure for radio frequency (RF) modules, we have proposed the new process named ”imprint-Through Mold Via (i-TMV)”, which could be fabricated by imprinting with a silicon master and filling with conductive paste. In this work, a test coupon was fabricated and EMI shielding effect of the i-TMV was actually evaluated by measurement of the electric field strength that leaked through from via array. As a result, it was found that the shielding effect was 23.6 dB at 4 GHz, which was close to the completely shielded value with a metal cap (25.6 dB). This result indicated that the i-TMV was significantly effective as a compartmental EMI shielding for the Sub-6 band application.\",\"PeriodicalId\":14363,\"journal\":{\"name\":\"International Symposium on Microelectronics\",\"volume\":\"7 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4071/1085-8024-2021.1.000303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4071/1085-8024-2021.1.000303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

为了形成射频(RF)模块的隔室EMI屏蔽结构,我们提出了一种新的工艺,称为“压印-通过模孔(i-TMV)”,该工艺可以用硅母材压印并填充导电浆料来制造。本文制作了一个测试片,通过测量通孔阵漏出的电场强度,实际评价了i-TMV的电磁干扰屏蔽效果。结果发现,在4 GHz时屏蔽效果为23.6 dB,接近金属帽完全屏蔽值(25.6 dB)。这一结果表明,在Sub-6波段应用中,i-TMV作为隔室EMI屏蔽是非常有效的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Verification of Compartmental Electromagnetic Interference Shielding Effect with imprint-Through Mold Via (i-TMV) for RF modules
In order to form a compartmental EMI shielding structure for radio frequency (RF) modules, we have proposed the new process named ”imprint-Through Mold Via (i-TMV)”, which could be fabricated by imprinting with a silicon master and filling with conductive paste. In this work, a test coupon was fabricated and EMI shielding effect of the i-TMV was actually evaluated by measurement of the electric field strength that leaked through from via array. As a result, it was found that the shielding effect was 23.6 dB at 4 GHz, which was close to the completely shielded value with a metal cap (25.6 dB). This result indicated that the i-TMV was significantly effective as a compartmental EMI shielding for the Sub-6 band application.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信