对1055 ~ 1064 nm多量子阱和超晶格激光二极管的制备进行了深入研究

2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference Pub Date : 2009-10-01 DOI:10.1109/IMPACT.2009.5382170

A. Wu, H. Tseng, C. Wan, Yan-Kuin Su, Chenming Hu, S. Tsau

{"title":"对1055 ~ 1064 nm多量子阱和超晶格激光二极管的制备进行了深入研究","authors":"A. Wu, H. Tseng, C. Wan, Yan-Kuin Su, Chenming Hu, S. Tsau","doi":"10.1109/IMPACT.2009.5382170","DOIUrl":null,"url":null,"abstract":"The InGaAs/GaAs multi-quantum-well as well as the AlGaAs/GaAs and the GaAsP/GaAs super-lattice laser diodes were successfully fabricated by low-pressure MOCVD system, and a number of novel structures were explored in this systematic investigation. The strain-relief effect and the composition of cladding layers were analyzed in detail. Via a series of growth experiments, we concluded that better lasing efficiency and the minimum threshold current could be obtained from the sample made up of the AlGaAs/GaAs structure combined with the 60% Aluminum content of the AlGaAs cladding layer.","PeriodicalId":6410,"journal":{"name":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","volume":"45 1","pages":"100-103"},"PeriodicalIF":0.0000,"publicationDate":"2009-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An in-depth study on the fabrication of 1055–1064 nm multi-quantum-well and super-lattice laser diodes\",\"authors\":\"A. Wu, H. Tseng, C. Wan, Yan-Kuin Su, Chenming Hu, S. Tsau\",\"doi\":\"10.1109/IMPACT.2009.5382170\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The InGaAs/GaAs multi-quantum-well as well as the AlGaAs/GaAs and the GaAsP/GaAs super-lattice laser diodes were successfully fabricated by low-pressure MOCVD system, and a number of novel structures were explored in this systematic investigation. The strain-relief effect and the composition of cladding layers were analyzed in detail. Via a series of growth experiments, we concluded that better lasing efficiency and the minimum threshold current could be obtained from the sample made up of the AlGaAs/GaAs structure combined with the 60% Aluminum content of the AlGaAs cladding layer.\",\"PeriodicalId\":6410,\"journal\":{\"name\":\"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference\",\"volume\":\"45 1\",\"pages\":\"100-103\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMPACT.2009.5382170\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMPACT.2009.5382170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用低压MOCVD系统成功制备了InGaAs/GaAs多量子阱、AlGaAs/GaAs和GaAsP/GaAs超晶格激光二极管，并探索了一些新的结构。详细分析了熔覆层的应变缓解效果和熔覆层的组成。通过一系列的生长实验，我们得出AlGaAs/GaAs结构与60%铝含量的AlGaAs包层结合可以获得更好的激光效率和最小阈值电流。

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An in-depth study on the fabrication of 1055–1064 nm multi-quantum-well and super-lattice laser diodes

The InGaAs/GaAs multi-quantum-well as well as the AlGaAs/GaAs and the GaAsP/GaAs super-lattice laser diodes were successfully fabricated by low-pressure MOCVD system, and a number of novel structures were explored in this systematic investigation. The strain-relief effect and the composition of cladding layers were analyzed in detail. Via a series of growth experiments, we concluded that better lasing efficiency and the minimum threshold current could be obtained from the sample made up of the AlGaAs/GaAs structure combined with the 60% Aluminum content of the AlGaAs cladding layer.

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2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference

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