CuAl2成分偏差对BTS和TDDB可靠性的影响

2021 IEEE International Interconnect Technology Conference (IITC) Pub Date : 2021-07-06 DOI:10.1109/IITC51362.2021.9537528

T. Kuge, M. Yahagi, J. Koike

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引用次数: 1

摘要

在本文中，我们报告了CuAl2的性能和可靠性及其在±5%范围内的成分位移的影响。400℃退火后的电阻率为7-8 μΩ·cm，即使成分发生了变化。在250℃下，3.0 MV/cm × 30 min条件下，经偏置热应力(BTS)测试后的电容电压(C - v)显示平带电压无移位。时间相关介电击穿(TDDB)评价表明，该互连的可靠性优于传统的Cu/TaN互连。

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Effects of composition deviation of CuAl2 on BTS and TDDB reliability

In this paper, we report the property and reliability of CuAl2 and its effects of compositional shift within ±5%. Resistivity was found to be 7–8 μΩ· cm after annealing at 400 °C, even with compositional shift. Capacitance–Voltage (C–V) after Bias Thermal Stress (BTS) test showed no shift of flat–band voltage under the condition of 3.0 MV/cm × 30 min at 250 °C. Time–Dependent–Dielectric–Breakdown (TDDB) evaluation showed that the reliability is better than that of conventional Cu/TaN interconnects.

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2021 IEEE International Interconnect Technology Conference (IITC)

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