层间厚度和合金化对瞬态液相(TLP)结合可靠性的影响

Junghyun Cho, F. Dong, L. Yin, D. Shaddock
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摘要

为了用一种新的耐高温材料取代高温电子产品(工作温度在200°C或更高)中常用的pb基焊料,我们在之前的研究中开发了铋(Bi)和镍(Ni)之间的瞬态液相(TLP)键合。为了解决可靠性问题并保证TLP键的制造效率,目前的研究重点是通过以下方式优化层间结构和合金化:i)薄键线厚度(BLT) (< 10 um), ii)中间BLT (20-40 um)和iii)厚BLT (> 60 um)。然后测试这些TLP粘结片的粘结反应、微观结构发展和机械可靠性。通过在Ni金属化的模具上溅射沉积Bi,制备了薄层BLT,使Ni层(?1微米)在回流过程中剩余,而没有完全消耗。在我们之前的研究中,中间的BLT样品是使用Bi预成型的。对于厚BLT病例,使用Bi-xNi(从x=0到21.9 wt.%)的粉末/糊状。特别是,由于纯Bi不会与Cu金属化表面(或Cu衬底)发生反应,由Bi- ni混合粉末/浆料组成的中间层将使Cu表面与该TLP体系结合。本文讨论了三种方法对双镍TLP键合的回流条件和层间组织的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of the Interlayer Thickness and Alloying on the Reliability of Transient Liquid Phase (TLP) Bonding
In an effort to replace Pb-based solders commonly used in high-temperature electronics (operating at 200°C or higher) with a new high-temperature capable material, we have developed a transient liquid phase (TLP) bonding between bismuth (Bi) and nickel (Ni) in our previous study. To address the reliability concerns and also to warrant the manufacturing efficiency of the TLP bonds, the current study was focused on the optimization of the interlayer structure and alloying via: i) thin bond-line-thickness (BLT) (< 10 um), ii) intermediate BLT (20-40 um), and iii) thick BLT (> 60 um). These TLP bonded coupons were then tested for bonding reaction, microstructure development, and mechanical reliability. A thin BLT was made via sputter deposition of Bi on Ni-metallized die, which enabled a Ni layer (? 1 um) remaining during reflow without being completely consumed. The intermediate BLT sample was made using a Bi preform as in our previous study. For the thick BLT case, a powder/paste of Bi-xNi (from x=0 to 21.9 wt.%) was used. In particular, as pure Bi will not react with the Cu metallized surface (or Cu substrate), an interlayer consisting of Bi-Ni mixed powder/paste will enable Cu surface to be bondable with this TLP system. In this paper, the reflow conditions and the interlayer microstructures for the Bi-Ni TLP bonding with the three different approaches are discussed.
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