用真空或溶液处理的非晶氧化物半导体提高薄膜晶体管的性能以实现显示应用

2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) Pub Date : 2018-08-01 DOI:10.1109/3M-NANO.2018.8552192

Changdong Chen, Gongtan Li, Minmin Li, Bo‐Ru Yang, Chuan Liu, Chia-Yu Lee, Yuan-chun Wu, Po-yen Lu, H. Shieh

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引用次数: 0

摘要

为了同时实现薄膜晶体管(TFTs)的高迁移率和良好的可靠性，我们通过真空或溶液为基础的方法在InGaZnO TFTs中加入氮气来控制氧空位。对于显示应用，IGZO和晶体硅tft被集成在一起构建混合CMOS。此外，还开发了溶液加工氧化物半导体的加性图像化方法，并在此基础上演示了晶圆级TFT阵列和NMOS。

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Enhancing Performance in Thin Tilm Transistors with Vacuum or Solution Processed Amorphous Oxide Semiconductors Towards Display Applications

To simultaneously achieve high mobility and good reliability of thin-film transistors (TFTs), we controlled oxygen vacancies via nitrogen incorporation in InGaZnO TFTs from vacuum- or solution-based methods. For display applications, IGZO and crystalline silicon TFTs were integrated together to build hybrid CMOS. Also, additive patterning method is developed for solution-processed oxide semiconductors, based on which wafer-scale TFT arrays and NMOS have been demonstrated.

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2018 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO)

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