{"title":"采用准分子激光退火在预图像化A - si薄膜上再结晶的新型多通道双栅多晶硅TFT","authors":"I. Song, C. Kim, S.H. Kang, W. Nam, A.K. Han","doi":"10.1109/IEDM.2002.1175903","DOIUrl":null,"url":null,"abstract":"We have proposed a new excimer laser annealing method which employs a floating a-Si thin film structure and the effect of pre-patterning. The proposed ELA produces two-dimensional grain growth so that a high quality grain structure can be obtained. We have also fabricated poly-Si TFTs by adapting the proposed ELA method. The dual-gate structure is used for the elimination of grain boundaries in the channel. The proposed poly-Si TFT exhibits high performance electrical characteristics, e.g. a high mobility of 504 cm/sup 2//V sec and low subthreshold slope of 0.337 V/dec.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"17 1","pages":"561-564"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"A new multi-channel dual-gate poly-Si TFT employing excimer laser annealing recrystallization on pre-patterned a-Si thin film\",\"authors\":\"I. Song, C. Kim, S.H. Kang, W. Nam, A.K. Han\",\"doi\":\"10.1109/IEDM.2002.1175903\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have proposed a new excimer laser annealing method which employs a floating a-Si thin film structure and the effect of pre-patterning. The proposed ELA produces two-dimensional grain growth so that a high quality grain structure can be obtained. We have also fabricated poly-Si TFTs by adapting the proposed ELA method. The dual-gate structure is used for the elimination of grain boundaries in the channel. The proposed poly-Si TFT exhibits high performance electrical characteristics, e.g. a high mobility of 504 cm/sup 2//V sec and low subthreshold slope of 0.337 V/dec.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"17 1\",\"pages\":\"561-564\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175903\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175903","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new multi-channel dual-gate poly-Si TFT employing excimer laser annealing recrystallization on pre-patterned a-Si thin film
We have proposed a new excimer laser annealing method which employs a floating a-Si thin film structure and the effect of pre-patterning. The proposed ELA produces two-dimensional grain growth so that a high quality grain structure can be obtained. We have also fabricated poly-Si TFTs by adapting the proposed ELA method. The dual-gate structure is used for the elimination of grain boundaries in the channel. The proposed poly-Si TFT exhibits high performance electrical characteristics, e.g. a high mobility of 504 cm/sup 2//V sec and low subthreshold slope of 0.337 V/dec.
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