22FDX®平台及其他平台的射频性能改进

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870435

T. Herrmann, A. Zaka, N. Subramani, Zhixing Zhao, S. Lehmann, Y. Andee

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引用次数: 1

摘要

本文介绍了制造工艺和布局优化，以提高22FDX®N/ fet器件的射频性能，基于直流和射频性能的综合校准。单个元件和组合元件的工艺和器件模拟显示，与主要由机械应力和寄生R/C元件驱动的标准器件相比，ft/fmax提高了约1.13/1.1倍(fet)和约1.32/1.24倍(fet)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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RF performance improvement on 22FDX® platform and beyond

The paper describes manufacturing process and layout optimizations to improve RF performance of 22FDX® N/PFET devices, based on a comprehensive calibration of DC and RF figures of merit. Process and Device simulations of the individual and combined elements show ft/fmax improvement up to about 1.13/1.1x (NFET) and about 1.32/1.24x (PFET) over standard devices mainly driven by mechanical stress and parasitic R/C elements.

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2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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