半透明钙钛矿微型模块互连方案评价

Colin D. Bailie, C. Eberspacher, Timothy S. Gehan, R. Bramante, M. Van Hest
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引用次数: 0

摘要

这项工作评估了半透明钙钛矿模块集成中围绕P1、P2和P3刻划的关键问题。我们发现P1的誊写程序很好地从其他薄膜技术中翻译过来。P2划痕最好使用机械划痕,但仍然是串联电阻的来源。发现P3划痕造成划痕死区增加,是潜在的劣化源。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluating Interconnection Schemes for Semi-transparent Perovskite Mini-modules
This work evaluates the critical issues surrounding P1, P2, and P3 scribing for semi-transparent perovskite module integration. We find that P1 scribing procedures are well-translated from other thin-film technologies. P2 scribing is best performed with a mechanical scribe, but remains a source of series resistance. P3 scribing is found to cause an increase in scribing dead area and a potential degradation source.
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