利用外电场和应变调谐GaSe/硅烷范德华异质结构的电子性质:第一性原理研究

IF 1.5 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Advances in Condensed Matter Physics Pub Date : 2021-03-10 DOI:10.1155/2021/5514897

Gang Xu, H. Lei

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引用次数: 1

摘要

通过第一性原理计算研究了GaSe/SiH异质结构在垂直电场和应变作用下的电子结构。异质结构的间接带隙特性在[−1.0，−0.4]V/Å范围内，直接带隙特性在[−0.3,0.2]V/Å范围内。此外，在−0.7和−0.3 V/Å处出现了ii型到i型的波段对准转变。此外，GaSe/SiH vdW异质结构在应变下具有ii型带向，但在- 3%时发生间接到直接的带隙半导体转变。这些结果表明GaSe/SiH vdW异质结构在新型纳米电子和光电子器件中具有应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Tuning Electronic Properties of GaSe/Silicane Van der Waals Heterostructure by External Electric Field and Strain: A First-Principle Study

The electronic structure of GaSe/silicane (GaSe/SiH) van der Waals (vdW) heterostructure in response to a vertical electric field and strain was studied via first-principle calculations. The heterostructure had indirect band gap characteristics in the range [−1.0, −0.4] V/Å and direct band gap features in the range [−0.3, 0.2] V/Å. Furthermore, a type-II to type-I band alignment transition appeared at −0.7 and −0.3 V/Å. Additionally, the GaSe/SiH vdW heterostructure had a type-II band alignment under strain, but an indirect to direct band gap semiconductor transition occurred at −3%. These results indicated that the GaSe/SiH vdW heterostructure may have applications in novel nanoelectronic and optoelectronic devices.

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来源期刊

Advances in Condensed Matter Physics PHYSICS, CONDENSED MATTER-

CiteScore

2.30

自引率

0.00%

发文量

审稿时长

6-12 weeks

期刊介绍： Advances in Condensed Matter Physics publishes articles on the experimental and theoretical study of the physics of materials in solid, liquid, amorphous, and exotic states. Papers consider the quantum, classical, and statistical mechanics of materials; their structure, dynamics, and phase transitions; and their magnetic, electronic, thermal, and optical properties. Submission of original research, and focused review articles, is welcomed from researchers from across the entire condensed matter physics community.