采用垂直集成双多晶硅层的cmos热电堆

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan) Pub Date : 2013-03-07 DOI:10.1109/MEMSYS.2013.6474270

Huchuan Zhou, P. Kropelnicki, J. Tsai, Chengkuo Lee

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引用次数: 4

摘要

采用cmos兼容工艺，设计并制作了一种基于垂直集成双层热电堆(VIDL)的红外传感器，该热电堆由96个热电偶组成。对这种热电堆的性能进行了表征。VIDL热电堆的响应度Rs为202.8V/W，探测率D*为2.85×108 cmHz1/2 W-1。

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CMOS-based thermopiles using vertically integrated double polycrystalline silicon layers

An infrared sensor based on a vertically integrated double layer (VIDL) thermopile which comprises of 96 thermocouples on a suspended membrane has been designed and fabricated by a CMOS-compatible process. The properties of this thermopile are characterized. The responsivity (Rs) of the VIDL thermopile is 202.8V/W and the detectivity (D*) of it is 2.85×108 cmHz1/2 W-1.

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来源期刊

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)

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