从晶圆加工到先进封装:扩大Tsv的应用范围,超越高端

R. Hollman
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引用次数: 0

摘要

电子封装技术多年来一直处于技术快速发展的时期,因为封装在提高笔记本电脑,平板电脑和智能手机等系统的成本和性能方面发挥着更大的作用。随着5G网络的引入、汽车电子内容的增加以及互联系统的普遍普及,这一趋势只会进一步加剧。封装面临的挑战包括处理更高密度的互连,在同一封装中连接多个芯片,以及通过减轻它们产生的压力来管理更大的热负荷。与5G相关的更高频率将需要新的结构和制造技术来最大限度地减少信号延迟和损耗,特别是在封装内的芯片之间。更小的互连特性和更严格的规格模糊了晶圆加工和封装之间的界限:许多历史上属于晶圆厂生产线的工艺正在进入封装过程。然而,材料、结构和规格都非常不同,这既是挑战也是机遇。在晶圆制造工艺中找到创造性应用的参与者将在竞争中脱颖而出,赢得市场份额。我们将在这里重点介绍先进封装中镀铜的新特性,以及对该工艺提出的特殊挑战。其中一些,如RDL的嵌入式导体和大型通孔填充加衬垫,需要改变在damascene和TSV (Through Silicon via)工艺中使用的优先“自下而上”的Cu沉积。我们将讨论电镀化学和工艺如何适应在先进的包装工艺流程中创造这些新功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
From Wafer Processing To Advanced Packaging: Broadening The Applications For Tsv’S Beyond The High End
Electronics packaging technology has been in a period of rapid technology advancement for a number of years, as the package takes on a larger role in improving the cost and performance of systems, such as laptops, tablets and smart phones. This trend will only increase with the introduction of 5G networks, the rising electronics content of automobiles, and the general proliferation of connected systems.The challenges for packaging include handling a greater density of interconnections, connecting multiple chips in the same package and managing greater heat loads by mitigating the stresses they create. The higher frequencies associated with 5G will require new structures and fabrication techniques to minimize signal delays and losses, especially between chips within a package.The smaller interconnect features and tighter specifications blur the boundary between wafer processing and packaging: many of the processes that were historically part of the fab line are finding their way into the packaging process. However, the materials, structures and specifications are very different, and this presents both a challenge and an opportunity. The players who find creative applications for wafer fabrication processes will differentiate themselves from the competition and win market share.We will focus here on a selection of new features for Cu plating in advanced packaging, and which pose special challenges to the process. Some of them, such as embedded conductor for RDL and large via fill plus pad, require a variation of the preferential “bottom up” Cu deposition used in damascene and TSV (Through Silicon Via) processes. We will discuss how the plating chemistry and process is adapted to create these new features in an advanced packaging process flow.
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