{"title":"带有BF/sub /-或硼注入栅极的表面沟道pmosfet中的热载子效应","authors":"T. Mogami, L.E.G. Johansson, I. Sakai, M. Fukuma","doi":"10.1109/IEDM.1991.235339","DOIUrl":null,"url":null,"abstract":"Hot-carrier effects for surface-channel PMOSFETs with p/sup +/ poly-Si gates were investigated. When the annealing temperature is higher and the gate oxide thickness is thinner, larger boron penetration is observed for p/sup +/ poly-Si PMOSFETs. As a dopant for poly-Si gates, BF/sub 2/ causes larger boron penetration. However, PMOSFET lifetime does not depend on the degree of boron penetration, but on doping species (BF/sub 2/ or boron). PMOSFETs with BF/sub 2/-implanted gates have about 100 times longer lifetime than those with boron-implanted gates, because electron trapping in the gate oxide with the BF/sub 2/-implanted gate is smaller due to the incorporation of fluorine. The maximum allowed supply voltage, based on the hot-carrier reliability, is higher than mod -4 mod V for sub half-micron PMOSFETs with p/sup +/ poly Si gates.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"10 1","pages":"533-536"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Hot-carrier effects in surface-channel PMOSFETs with BF/sub 2/- or boron-implanted gates\",\"authors\":\"T. Mogami, L.E.G. Johansson, I. Sakai, M. Fukuma\",\"doi\":\"10.1109/IEDM.1991.235339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot-carrier effects for surface-channel PMOSFETs with p/sup +/ poly-Si gates were investigated. When the annealing temperature is higher and the gate oxide thickness is thinner, larger boron penetration is observed for p/sup +/ poly-Si PMOSFETs. As a dopant for poly-Si gates, BF/sub 2/ causes larger boron penetration. However, PMOSFET lifetime does not depend on the degree of boron penetration, but on doping species (BF/sub 2/ or boron). PMOSFETs with BF/sub 2/-implanted gates have about 100 times longer lifetime than those with boron-implanted gates, because electron trapping in the gate oxide with the BF/sub 2/-implanted gate is smaller due to the incorporation of fluorine. The maximum allowed supply voltage, based on the hot-carrier reliability, is higher than mod -4 mod V for sub half-micron PMOSFETs with p/sup +/ poly Si gates.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"10 1\",\"pages\":\"533-536\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235339\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hot-carrier effects in surface-channel PMOSFETs with BF/sub 2/- or boron-implanted gates
Hot-carrier effects for surface-channel PMOSFETs with p/sup +/ poly-Si gates were investigated. When the annealing temperature is higher and the gate oxide thickness is thinner, larger boron penetration is observed for p/sup +/ poly-Si PMOSFETs. As a dopant for poly-Si gates, BF/sub 2/ causes larger boron penetration. However, PMOSFET lifetime does not depend on the degree of boron penetration, but on doping species (BF/sub 2/ or boron). PMOSFETs with BF/sub 2/-implanted gates have about 100 times longer lifetime than those with boron-implanted gates, because electron trapping in the gate oxide with the BF/sub 2/-implanted gate is smaller due to the incorporation of fluorine. The maximum allowed supply voltage, based on the hot-carrier reliability, is higher than mod -4 mod V for sub half-micron PMOSFETs with p/sup +/ poly Si gates.<>
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