用于双栅CMOS器件的坚固的三元金属栅电极

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979597

Dae-gyu Park, Taeho Cha, K. Lim, Heung-Jae Cho, Tae-Kyun Kim, S. Jang, You-Seok Suh, V. Misra, I. Yeo, J. Roh, J. Park, H. Yoon

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引用次数: 45

摘要

本报告描述了用于表面通道硅CMOS器件的热稳定双金属栅电极。我们发现，Ti/sub - 1-x/Al/sub -x/ N/sub - y/ (TiAlN)和TaSi/sub -x/ N/sub - y/ (TaSiN)三元金属氮化物薄膜在高达1000/spl℃的温度下都是稳定的。特别是，化学测量TiAlN (y/spl sim/1)表现出高度稳健的p型栅极(p-TiAlN)性能，其功函数(/spl Phi//sub m/)为/spl sim/5.1 eV，并且具有优异的栅极氧化物完整性，可以抵抗传统Si CMOS工艺的热收支。n型电极(n-TiAlN)的缺氮TiAlN (y < 1)表现为/spl Phi//sub m/，热稳定性有限。双栅电极p-TiAlN和TaSiN在高k栅介质(ZrO/sub 2/， HfO/sub 2/)上的EOT(等效氧化物厚度)变化可忽略不计，最高可达950/spl℃。

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Robust ternary metal gate electrodes for dual gate CMOS devices

This report describes thermally stable dual metal gate electrodes for surface channel Si CMOS devices. We found that the ternary metal nitrides, i.e., Ti/sub 1-x/Al/sub x/N/sub y/ (TiAlN) and TaSi/sub x/N/sub y/ (TaSiN) films, are stable up to 1000/spl deg/C. Especially, the stoichiometric TiAlN (y/spl sim/1) exhibited highly robust p-type gate electrode (p-TiAlN) properties, demonstrating a work function (/spl Phi//sub m/) of /spl sim/5.1 eV and excellent gate oxide integrity against the thermal budget of conventional Si CMOS processing. The N-deficient TiAlN (y < 1) showed /spl Phi//sub m/ for n-type electrode (n-TiAlN) with limited thermal stability. The dual gate electrodes, p-TiAlN and TaSiN, exhibited negligible EOT (equivalent oxide thickness) variation on the high-k gate dielectrics (ZrO/sub 2/, HfO/sub 2/) up to 950/spl deg/C.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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