在硅陶瓷复合材料和标准环氧树脂/玻璃基板上集成BAW滤波器的功率放大器的设计与性能

V. Chauhan, L. W. Wandji, X. Peng, V. Silva Cortes, A. Frank, M. Fischer, U. Stehr, R. Weigel, A. Hagelauer
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引用次数: 2

摘要

在LTE发射机(Tx)射频集成电路中,考虑功率放大器(PA)与相邻射频滤波器(BAW)之间的热耦合和非线性耦合对可靠性至关重要,需要特别注意。基于两种衬底技术,设计了具有最佳匹配网络的砷化镓(GaAs) PA、BAW Tx滤波器。一种设计采用了一种新型硅陶瓷(SiCer)平台,该平台将低温共烧陶瓷(LTCC)层与薄硅晶片结合在单一复合基板上,另一种设计采用了标准的编织玻璃/环氧基板技术。在相同的布局设计下,比较了不同衬底工艺的线性性能。BAW滤波器是基于固体安装谐振器(SMR)电耦合的梯形拓扑结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Performance of Power Amplifier Integration with BAW Filter on a Silicon-Ceramic Composite and Standard Epoxy/Glass Substrate
In radio frequency (RF) integrated circuits for LTE transmitters (Tx), the consideration of the thermal and nonlinear coupling between the Power Amplifier (PA) and adjacent RF filters realized by Bulk Acoustic Wave (BAW) technology is crucial for reliability and requires special attention. A co-design of Gallium Arsenide (GaAs) PA, BAW Tx filter with optimum matching network is created on two substrate technologies. One design utilizes a novel silicon-ceramic (SiCer) platform which combines a stack of low temperature co-fired ceramic (LTCC) layers with a thin silicon wafer in a single composite substrate and the second design uses standard woven glass/epoxy substrate technology. The linear performance of the different substrate technologies are compared with the same layout design. The BAW filter is based on Solidly Mounted Resonators (SMR) electrically coupled in a ladder type topology.
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