{"title":"利用单栅极Mosfet改变其氧化物厚度以提高电导率的新型Finfet的电压和电流特性的仿真与比较","authors":"T. Reddy, A. Deepak","doi":"10.47750/CIBG.2021.27.04.021","DOIUrl":null,"url":null,"abstract":"Aim: The current and voltage characteristics of FinFET and single gate MOSFET are simulated by varying their oxide thickness ranging from 2 nm to 20 nm. Materials and Methods: The electrical conductance of FINFET (n= 320) was compared with MOSFET (n=320) by varying oxide thickness ranging from 2 nm to 20 nm in the NANO HUB tool simulation environment. Results: FINFET has significantly higher conductance (2.66*10-4 mho P<0.05) than single gate MOSFET (1.64*10-4 mho). The optimal thickness for maximum conductivity was 2nm for FINFET, and 2 nm for MOSFET. Conclusion: Within the limits of this study, FINFET with oxide thickness of 2 nm offers the best conductivity.","PeriodicalId":42396,"journal":{"name":"Alinteri Journal of Agriculture Sciences","volume":"1 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2021-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Simulation and Comparison of Voltage and Current Characteristics of Novel Finfet by Varying its Oxide Thickness with Single Gate Mosfet for Improved Conductivity\",\"authors\":\"T. Reddy, A. Deepak\",\"doi\":\"10.47750/CIBG.2021.27.04.021\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aim: The current and voltage characteristics of FinFET and single gate MOSFET are simulated by varying their oxide thickness ranging from 2 nm to 20 nm. Materials and Methods: The electrical conductance of FINFET (n= 320) was compared with MOSFET (n=320) by varying oxide thickness ranging from 2 nm to 20 nm in the NANO HUB tool simulation environment. Results: FINFET has significantly higher conductance (2.66*10-4 mho P<0.05) than single gate MOSFET (1.64*10-4 mho). The optimal thickness for maximum conductivity was 2nm for FINFET, and 2 nm for MOSFET. Conclusion: Within the limits of this study, FINFET with oxide thickness of 2 nm offers the best conductivity.\",\"PeriodicalId\":42396,\"journal\":{\"name\":\"Alinteri Journal of Agriculture Sciences\",\"volume\":\"1 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-04-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Alinteri Journal of Agriculture Sciences\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.47750/CIBG.2021.27.04.021\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Alinteri Journal of Agriculture Sciences","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.47750/CIBG.2021.27.04.021","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Simulation and Comparison of Voltage and Current Characteristics of Novel Finfet by Varying its Oxide Thickness with Single Gate Mosfet for Improved Conductivity
Aim: The current and voltage characteristics of FinFET and single gate MOSFET are simulated by varying their oxide thickness ranging from 2 nm to 20 nm. Materials and Methods: The electrical conductance of FINFET (n= 320) was compared with MOSFET (n=320) by varying oxide thickness ranging from 2 nm to 20 nm in the NANO HUB tool simulation environment. Results: FINFET has significantly higher conductance (2.66*10-4 mho P<0.05) than single gate MOSFET (1.64*10-4 mho). The optimal thickness for maximum conductivity was 2nm for FINFET, and 2 nm for MOSFET. Conclusion: Within the limits of this study, FINFET with oxide thickness of 2 nm offers the best conductivity.
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