Wan-Don Kim, J. Joo, Y. Jeong, Seok-jun Won, Soon-yeon Park, Sung-Choon Lee, C. Yoo, Sung-tae Kim, J. Moon
{"title":"用于千兆级DRAM的凹形CVD-Ru/Ta/sub 2/O/sub 5//电容器的研制","authors":"Wan-Don Kim, J. Joo, Y. Jeong, Seok-jun Won, Soon-yeon Park, Sung-Choon Lee, C. Yoo, Sung-tae Kim, J. Moon","doi":"10.1109/IEDM.2001.979480","DOIUrl":null,"url":null,"abstract":"RIR(Ru/Crystalline-Ta/sub 2/O/sub 5/Ru) capacitor with concave structure was studied for the application into multigigabit-scale DRAM device. In this work, several novel technologies were successfully developed to solve current issues in the fabrication of RIR concave capacitor; such as 1) two-step deposition of Ta/sub 2/O/sub 5/ films 2) formation of Ta/sub 2/O/sub 5/ spacer 3) new separation process of Ru storage node using maskless etch-back method 4) H/sub 2/ pre-annealing and 5) Ar plasma pre-treatment on Ru bottom electrode. The RIR concave capacitor (design rule/spl sim/0.12 /spl mu/m, node height/spl sim/0.85 /spl mu/m) fabricated with these novel technologies showed excellent electrical properties (25fF/cell, 1fA/cell at /spl plusmn/ 1V), which indicates that RIR structure is the one of the most promising candidate for the next generation DRAM capacitor.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"3 1","pages":"12.1.1-12.1.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Development of CVD-Ru/Ta/sub 2/O/sub 5//CVD-Ru capacitor with concave structure for multigigabit-scale DRAM generation\",\"authors\":\"Wan-Don Kim, J. Joo, Y. Jeong, Seok-jun Won, Soon-yeon Park, Sung-Choon Lee, C. Yoo, Sung-tae Kim, J. Moon\",\"doi\":\"10.1109/IEDM.2001.979480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RIR(Ru/Crystalline-Ta/sub 2/O/sub 5/Ru) capacitor with concave structure was studied for the application into multigigabit-scale DRAM device. In this work, several novel technologies were successfully developed to solve current issues in the fabrication of RIR concave capacitor; such as 1) two-step deposition of Ta/sub 2/O/sub 5/ films 2) formation of Ta/sub 2/O/sub 5/ spacer 3) new separation process of Ru storage node using maskless etch-back method 4) H/sub 2/ pre-annealing and 5) Ar plasma pre-treatment on Ru bottom electrode. The RIR concave capacitor (design rule/spl sim/0.12 /spl mu/m, node height/spl sim/0.85 /spl mu/m) fabricated with these novel technologies showed excellent electrical properties (25fF/cell, 1fA/cell at /spl plusmn/ 1V), which indicates that RIR structure is the one of the most promising candidate for the next generation DRAM capacitor.\",\"PeriodicalId\":13825,\"journal\":{\"name\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"volume\":\"3 1\",\"pages\":\"12.1.1-12.1.4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-12-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2001.979480\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of CVD-Ru/Ta/sub 2/O/sub 5//CVD-Ru capacitor with concave structure for multigigabit-scale DRAM generation
RIR(Ru/Crystalline-Ta/sub 2/O/sub 5/Ru) capacitor with concave structure was studied for the application into multigigabit-scale DRAM device. In this work, several novel technologies were successfully developed to solve current issues in the fabrication of RIR concave capacitor; such as 1) two-step deposition of Ta/sub 2/O/sub 5/ films 2) formation of Ta/sub 2/O/sub 5/ spacer 3) new separation process of Ru storage node using maskless etch-back method 4) H/sub 2/ pre-annealing and 5) Ar plasma pre-treatment on Ru bottom electrode. The RIR concave capacitor (design rule/spl sim/0.12 /spl mu/m, node height/spl sim/0.85 /spl mu/m) fabricated with these novel technologies showed excellent electrical properties (25fF/cell, 1fA/cell at /spl plusmn/ 1V), which indicates that RIR structure is the one of the most promising candidate for the next generation DRAM capacitor.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
